transistors 1 publication date: december 2002 sjc00281bed 2SC4626J silicon npn epitaxial planar type for high-frequency amplification features ? optimum for rf amplification of fm/am radios ? high transition frequency f t ? ss-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 30 v collector-emitter voltage (base open) v ceo 20 v emitter-base voltage (collector open) v ebo 5v collector current i c 30 ma collector power dissipation p c 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 10 v, i e = 0 0.1 a forward current transfer ratio * h fe v cb = 10 v, i e = ? 1 ma 70 220 ? transition frequency f t v cb = 10 v, i e = ? 1 ma, f = 200 mhz 150 250 mhz noise figure nf v cb = 10 v, i e = ? 1 ma, f = 5 mhz 2.8 4.0 db reverse transfer impedance z rb v cb = 10 v, i e = ? 1 ma, f = 2 mhz 22 50 ? common-emitter reverse transfer c re v cb = 10 v, i e = ? 1 ma, f = 10.7 mhz 0.9 1.5 pf capacitance electrical characteristics t a = 25 c 3 c rank b c no-rank h fe 70 to 140 110 to 220 70 to 220 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification unit: mm marking symbol: v 0.27 0.02 3 12 0.12 +0.03 ?0.01 0.80 0.05 (0.80) 0.85 1.60 0.05 0 to 0.02 0.10 max. 0.70 +0.05 ?0.03 (0.375) 5? 5? 1.60 +0.05 ?0.03 1.00 0.05 (0.50)(0.50) +0.05 ?0.03 1: base 2: emitter 3: collector eiaj: sc-89 ssmini3-f1 package product of no-rank is not classified and have no indication for rank.
2SC4626J 2 sjc00281bed i b ? v be i c ? v be v ce(sat) ? i c p c ? t a i c ? v ce i c ? i b h fe ? i c c ob ? v cb 0 140 60 20 80 120 40 100 0 140 120 100 60 80 40 20 ambient temperature t a ( c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 16 12 4 10 14 8 2 6 t a = 25 c i b = 100 a 80 a 60 a 40 a 20 a collector-emitter voltage v ce ( v ) collector current i c (m a ) 012 10 8 26 4 0 100 80 60 40 20 90 70 50 30 10 v ce = 10 v t a = 25 c base current i b ( ma ) collector current i c ( ma ) 0 1.2 1.0 0.8 0.2 0.6 0.4 0 10 20 30 40 50 60 70 80 90 v ce = 10 v t a = 25 c base-emitter voltage v be ( v ) base current i b ( ma ) 0 0.2 0.6 0.8 1.0 1.2 0.4 1.4 0 120 100 80 60 40 20 v ce = 10 v t a = 85 c 25 c ? 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 1 000 0.01 10 1 0.1 i c / i b = 10 t a = 85 c 25 c ? 25 c collector current i c ( ma ) collector-emitter saturation voltage v ce(sat) ( v ) 1 10 100 0 250 200 150 100 50 v ce = 10 v t a = 85 c 25 c ? 25 c collector current i c ( ma ) forward current transfer ratio h fe 0 5 15 20 25 30 10 35 1 10 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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